Summary
Researchers led by Professor Zhenan Bao at Stanford University have developed intrinsically stretchable transistor arrays for wearable electronics, with high device density and strain insensitivity. The material maintains less than 5% performance variation under 100% strain, making it ideal for capturing physiological signals despite strain changes. The team introduced “elastiff” layers, using rigid and soft SEBS materials, to minimize deformation in active regions, ensuring strong adhesion and durability. Their approach improves stability and electrical performance, even after 1,000 stretching cycles. The material was successfully integrated into circuits, including amplifiers for electromyography, showing excellent skin conformability and signal quality. This innovation enhances the potential of wearable devices for health diagnostics.